Technische Information / Technical Information IGBT-Module IGBT-Modules BSM150GB120DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom .
values www.DataSheet4U.com Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 150A, V GE = 15V, Tvj = 25°C IC = 150A, V GE = 15V, Tvj = 125°C IC = 6mA, V CE = VGE, Tvj = 25°C VGE(th) VCE sat min. 4,5 typ. 2,1 2,4 5,5 max. 2,6 V V 6,5 V VGE = -15V...+15V QG - - - µC f.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM150GB120DN2 |
Siemens Semiconductor Group |
IGBT | |
2 | BSM150GB120DN2E3166 |
Siemens Semiconductor Group |
IGBT | |
3 | BSM150GB170DLC |
eupec |
IGBT | |
4 | BSM150GB170DN2 |
Siemens Semiconductor Group |
IGBT | |
5 | BSM150GB170DN2E3166 |
Siemens Semiconductor Group |
IGBT | |
6 | BSM150GB60DLC |
eupec |
IGBT-Modules | |
7 | BSM150GAL120DN2 |
Siemens Semiconductor Group |
IGBT | |
8 | BSM150GAL120DN2E3166 |
Siemens Semiconductor Group |
IGBT | |
9 | BSM150GD60DLC |
eupec |
IGBT | |
10 | BSM150GT120DN2 |
Siemens Semiconductor Group |
IGBT | |
11 | BSM151 |
Siemens Semiconductor Group |
IGBT | |
12 | BSM151F |
Siemens Semiconductor Group |
IGBT |