Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collctor cu.
0A, VGE = 15V, Tvj = 25°C IC = 150A, VGE = 15V, Tvj = 125°C IC = 7mA, VCE = VGE, Tvj = 25°C Gateladung gate charge VGE = -15V ... +15V Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V VCE = 1700V, VGE = 0V, Tvj = 25°C VCE = 1700V, VGE = 0V, Tvj = 125°C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C prepared by: Regine Mallwitz approved by: Chr. Lübke; 28.11.2000 date of .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM150GB170DN2 |
Siemens Semiconductor Group |
IGBT | |
2 | BSM150GB170DN2E3166 |
Siemens Semiconductor Group |
IGBT | |
3 | BSM150GB120DLC |
eupec GmbH |
IGBT | |
4 | BSM150GB120DN2 |
Siemens Semiconductor Group |
IGBT | |
5 | BSM150GB120DN2E3166 |
Siemens Semiconductor Group |
IGBT | |
6 | BSM150GB60DLC |
eupec |
IGBT-Modules | |
7 | BSM150GAL120DN2 |
Siemens Semiconductor Group |
IGBT | |
8 | BSM150GAL120DN2E3166 |
Siemens Semiconductor Group |
IGBT | |
9 | BSM150GD60DLC |
eupec |
IGBT | |
10 | BSM150GT120DN2 |
Siemens Semiconductor Group |
IGBT | |
11 | BSM151 |
Siemens Semiconductor Group |
IGBT | |
12 | BSM151F |
Siemens Semiconductor Group |
IGBT |