BLF277 - NXP

BLF277 VHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap. All leads are isolated from the flange. Fig.1 Simplified outline and symbol. A marking code, showing gate-source voltage (VGS) informa.

Features

• High power gain
• Easy power control
• Gold metallization ensures excellent reliability
• Good thermal stability
• Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap. All leads are isolated from the flange. Fig.1 Simplified outline and symbol. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the ‘General' section f.