BLF2022-40 - NXP

BLF2022-40 UHF power LDMOS transistor

APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range • Suitable for GSM, Edge, CDMA and WCDMA applications. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap. The common source is connected to the mounting.

Features

• High power gain
• Easy power control
• Excellent ruggedness
• Designed for broadband operation (2.0 to 2.2 GHz)
• Internal input and output matching for high gain and efficiency
• Improved linearity at backoff levels. 1 BLF2022-40 PINNING PIN 1 2 3 drain gate source, connected to flange DESCRIPTION APPLICATIONS
• Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range
• Suitable for GSM, Edge, CDMA and WCDMA applications. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package wit.