BLF278 - NXP

BLF278 VHF push-pull power MOS transistor

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge d.

Features

• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability. APPLICATIONS
• Broadcast transmitters in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. 1 2 BLF278 PINN.