BLF2022-70 - NXP

BLF2022-70 UHF power LDMOS transistor

1 3 MBK394 APPLICATIONS • RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range. DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION 2-tone.

Features

• Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A:
  – Output power = 7.5 W (AV)
  – Gain = 12.5 dB
  – Efficiency = 20%
  – ACPR = −42 dBc at 3.84 MHz
  – dim = −36 dBc
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (2000 to 2200 MHz)
• Internally matched for ease of use. Top view 2 handbook, halfpage BLF2022-70 PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 3 MBK394 APPLICATIONS
• RF power amplifiers for W-CDMA base stations and multicarrier applications in the 200.