1 drain 2 gate 3 source, connected to flange APPLICATIONS • Communication transmitter applications in the UHF frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. 1 2 Top view 3 MBK584 Fig.1 Simp.
• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators,
reducing common mode inductance
• Designed for broadband operation (HF to 2.2 GHz).
PINNING - SOT467C
PIN DESCRIPTION 1 drain 2 gate 3 source, connected to flange
APPLICATIONS
• Communication transmitter applications in the UHF frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.
1
2 Top view
3
MBK584
Fig.1 Simplified o.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF2043 |
NXP |
UHF power LDMOS transistor | |
2 | BLF2045 |
NXP |
UHF power LDMOS transistor | |
3 | BLF2047 |
NXP |
UHF power LDMOS transistor | |
4 | BLF2047L |
NXP |
UHF power LDMOS transistor | |
5 | BLF2047L-90 |
Philips |
UHF power LDMOS transistor | |
6 | BLF2048 |
NXP |
UHF push-pull power LDMOS transistor | |
7 | BLF2012LM31R2400A |
YAGEO |
WIRELESS COMPONENTS | |
8 | BLF202 |
NXP |
HF/VHF power MOS transistor | |
9 | BLF2022-120 |
NXP |
UHF push-pull power LDMOS transistor | |
10 | BLF2022-125 |
NXP |
UHF power LDMOS transistor | |
11 | BLF2022-30 |
NXP |
UHF power LDMOS transistor | |
12 | BLF2022-40 |
NXP |
UHF power LDMOS transistor |