125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. Top view 2 1 BLF2022-125 PINNING - SOT634A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 3 MBL367 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit; single-carrier W-CDMA test model 1, 6.
• Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A
– Output power = 20 W (AV)
– Gain = 12 dB
– Efficiency = 19%
– ACPR = −42 dBc at 3.84 MHz
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (2000 to 2200 MHz)
• Internally matched for ease of use. APPLICATIONS
• RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz.
Top view 2 1
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF2022-120 |
NXP |
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2 | BLF2022-30 |
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3 | BLF2022-40 |
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4 | BLF2022-70 |
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5 | BLF2022-90 |
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6 | BLF202 |
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7 | BLF2012LM31R2400A |
YAGEO |
WIRELESS COMPONENTS | |
8 | BLF2043 |
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9 | BLF2043F |
Philips |
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10 | BLF2045 |
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11 | BLF2047 |
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12 | BLF2047L |
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