Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B operation at a supply voltage of 50 V. The transistor is encapsulated in a 6-lead, SOT119 pill-package envelope, with a ceramic cap. PINNING - SOT119D3 PIN 1 2 3 .
• High power gain
• Easy power control
• Good thermal stability DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B operation at a supply voltage of 50 V. The transistor is encapsulated in a 6-lead, SOT119 pill-package envelope, with a ceramic cap. PINNING - SOT119D3 PIN 1 2 3 4 5 6 DESCRIPTION source source gate drain source source WARNING Product and environmental safety - toxic materials
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BLF276
PIN CONFIGURATION
1
2
d
3
4
g
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF277 |
NXP |
VHF power MOS transistor | |
2 | BLF278 |
NXP |
VHF push-pull power MOS transistor | |
3 | BLF2012LM31R2400A |
YAGEO |
WIRELESS COMPONENTS | |
4 | BLF202 |
NXP |
HF/VHF power MOS transistor | |
5 | BLF2022-120 |
NXP |
UHF push-pull power LDMOS transistor | |
6 | BLF2022-125 |
NXP |
UHF power LDMOS transistor | |
7 | BLF2022-30 |
NXP |
UHF power LDMOS transistor | |
8 | BLF2022-40 |
NXP |
UHF power LDMOS transistor | |
9 | BLF2022-70 |
NXP |
UHF power LDMOS transistor | |
10 | BLF2022-90 |
NXP |
UHF power LDMOS transistor | |
11 | BLF2043 |
NXP |
UHF power LDMOS transistor | |
12 | BLF2043F |
Philips |
UHF power LDMOS transistor |