BLF277 |
Part Number | BLF277 |
Manufacturer | NXP (https://www.nxp.com/) |
Description | Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 6-lead, SOT119 flange enve... |
Features |
• High power gain • Easy power control • Gold metallization ensures excellent reliability • Good thermal stability • Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap. All leads are isolated from the flange. Fig.1 Simplified outline and symbol. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the ‘General' section f... |
Document |
BLF277 Data Sheet
PDF 101.84KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF276 |
NXP |
VHF power MOS transistor | |
2 | BLF278 |
NXP |
VHF push-pull power MOS transistor | |
3 | BLF2012LM31R2400A |
YAGEO |
WIRELESS COMPONENTS | |
4 | BLF202 |
NXP |
HF/VHF power MOS transistor | |
5 | BLF2022-120 |
NXP |
UHF push-pull power LDMOS transistor |