BLF276 |
Part Number | BLF276 |
Manufacturer | NXP (https://www.nxp.com/) |
Description | Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B op... |
Features |
• High power gain • Easy power control • Good thermal stability DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B operation at a supply voltage of 50 V. The transistor is encapsulated in a 6-lead, SOT119 pill-package envelope, with a ceramic cap. PINNING - SOT119D3 PIN 1 2 3 4 5 6 DESCRIPTION source source gate drain source source WARNING Product and environmental safety - toxic materials page BLF276 PIN CONFIGURATION 1 2 d 3 4 g ... |
Document |
BLF276 Data Sheet
PDF 85.95KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF277 |
NXP |
VHF power MOS transistor | |
2 | BLF278 |
NXP |
VHF push-pull power MOS transistor | |
3 | BLF2012LM31R2400A |
YAGEO |
WIRELESS COMPONENTS | |
4 | BLF202 |
NXP |
HF/VHF power MOS transistor | |
5 | BLF2022-120 |
NXP |
UHF push-pull power LDMOS transistor |