The BFP450 is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its tmraankseittihoendfreevqicueensuciytafTbolef 24 GHz, collector design and high for energy efficiency applications linearity characteristics up to 3 GHz. It remains cost competitive without com.
ion Table 1 Part information Product name / Ordering code Package Pin configuration Marking BFP450 / BFP450H6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E ANs BFP450 / BFP450H6433XTMA1 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Pieces / Reel 3000 10000 Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document www.infineon.com Revision 3.0 2024-07-01 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . ..
SIEGET® 25 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P -1dB = +19 dBm at 1.8 GHz maxim.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BFP405 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
2 | BFP405 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
3 | BFP405F |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
4 | BFP410 |
Infineon |
Low Noise Silicon Bipolar RF Transistor | |
5 | BFP420 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
6 | BFP420 |
Infineon |
Surface mount wideband silicon NPN RF bipolar transistor | |
7 | BFP420F |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
8 | BFP420W |
INCHANGE |
NPN Transistor | |
9 | BFP460 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
10 | BFP490 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
11 | BFP10 |
Thomson Semiconductors |
(BFPxx) Class A Low Noise | |
12 | BFP136 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |