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BFP450 - Infineon

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BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor

The BFP450 is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its tmraankseittihoendfreevqicueensuciytafTbolef 24 GHz, collector design and high for energy efficiency applications linearity characteristics up to 3 GHz. It remains cost competitive without com.

Features

ion Table 1 Part information Product name / Ordering code Package Pin configuration Marking BFP450 / BFP450H6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E ANs BFP450 / BFP450H6433XTMA1 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Pieces / Reel 3000 10000 Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document www.infineon.com Revision 3.0 2024-07-01 BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . ..

The same part from a different manufacturer

Datasheet BFP450 - Siemens Semiconductor Group BFP450

SIEGET® 25 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P -1dB = +19 dBm at 1.8 GHz maxim.

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