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BFP460 Low Noise Silicon Bipolar RF Transistor • General purpose low noise amplifier for low voltage, low current applications • High ESD robustness, typical 1500 V (HBM) • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point OP1dB = 13 dBm @ 3 V, 35 mA, 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package with visib.
tor lead at the soldering point to the pcb Value 4.5 4.2 15 15 1.5 70 7 230 150 -65 ... 150 -65 ... 150 Unit V mA mW °C 2013-09-13 1 BFP460 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 250 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 4.5 5.8 Collector-emitter cutoff current VCE = 15 V, VBE = 0 VCE = 2 V, VBE = 0 VCE = 5 V, VBE = 0 , TA = 85°C Verified by random sampling ICES --1 -2 max. - 1000 3.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BFP405 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 2 | BFP405 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 3 | BFP405F |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 4 | BFP410 |
Infineon |
Low Noise Silicon Bipolar RF Transistor |
|
| 5 | BFP420 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 6 | BFP420 |
Infineon |
Surface mount wideband silicon NPN RF bipolar transistor |
|
| 7 | BFP420F |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 8 | BFP420W |
INCHANGE |
NPN Transistor |
|
| 9 | BFP450 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 10 | BFP450 |
Infineon |
Surface mount high linearity wideband silicon NPN RF bipolar transistor |
|
| 11 | BFP490 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 12 | BFP10 |
Thomson Semiconductors |
(BFPxx) Class A Low Noise |
|