BFP490 - Siemens Semiconductor Group

BFP490 NPN Silicon RF Transistor

SIEGET® 25 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency fT > 17 GHz • Gold metalization for high reliability • SIEGET ® 25 - Line Siemens Grounded Emitter Transistor 25 GHz fT - Line BFP 490 4 5 3 2 1 VPW05980 ESD:.

Features

ldering point mounted on alumina 15 mm x 16,7 mm x 0.7 mm Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BFP 490 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 200 mA, V CE = 3 V AC characteristics Transition frequency IC = 300 mA, VCE = 3 V, f = 0.2 GHz IC = 300 mA, VCE = 3 V, f = 0.5 GHz Collector-base capacitance VCB = 2 V, f = 1.