BFP405 - Siemens Semiconductor Group

BFP405 NPN Silicon RF Transistor

SIEGET® 25 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metalization for high reliability • SIEGET ® 25 - Line Siemens Grounded Emitter Transistor 25 GHz f T - Line BFP 405 3 4 2 1 VPS05605 ESD: El.

Features

ring point to the pcb Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BFP 405 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 5 mA, V CE = 4 V typ. 5 90 max. 6.5 150 15 150 V nA µA - Unit V(BR)CEO I CBO I EBO hFE 4.5 50 AC characteristics Transition frequency IC = 10 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f.