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BFP450 |
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| Part Number | BFP450 |
| Manufacturer | Siemens Semiconductor Group |
| Description | SIEGET® 25 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • ... |
| Features |
ector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11
Sep-09-1998 1998-11-01
BFP 450
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 50 mA, VCE = 4 V
AC characteristics Transition frequency IC = 90 mA, VCE = 3 V, f = 1 GHz IC = 90 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitte... |
| Document |
 BFP450 Data Sheet
PDF 49.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BFP450 |
Infineon |
Surface mount high linearity wideband silicon NPN RF bipolar transistor |
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| 2 | BFP405 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
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| 3 | BFP405 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
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| 4 | BFP405F |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
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| 5 | BFP410 |
Infineon |
Low Noise Silicon Bipolar RF Transistor |
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