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Low Noise Silicon Bipolar RF Transistor • For low current applications • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz Outstanding Gms = 22.5 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package (1.4 x 0.8 x 0.59 mm) with visible leads • Qualification report according to AEC-Q101 available BF.
r Junction - soldering point1) Symbol RthJS Value 4.5 4.1 15 15 1.5 25 3 75 150 -55 ... 150 Value 500 Unit V mA mW °C Unit K/W 1 2013-09-19 BFP405F Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 5 mA, VCE = 4 V, pulse measured V(BR)CEO 4 5 - V ICES - - 10 µA ICBO - - 100 n.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BFP405 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 2 | BFP405 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 3 | BFP410 |
Infineon |
Low Noise Silicon Bipolar RF Transistor |
|
| 4 | BFP420 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 5 | BFP420 |
Infineon |
Surface mount wideband silicon NPN RF bipolar transistor |
|
| 6 | BFP420F |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 7 | BFP420W |
INCHANGE |
NPN Transistor |
|
| 8 | BFP450 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 9 | BFP450 |
Infineon |
Surface mount high linearity wideband silicon NPN RF bipolar transistor |
|
| 10 | BFP460 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 11 | BFP490 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 12 | BFP10 |
Thomson Semiconductors |
(BFPxx) Class A Low Noise |
|