·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage V.
C Current Gain IC= 20mA ; VCE= 4V fT Transition frequency IC= 25mA ; VCE= 2V; f= 2GHz NF Noise Figure IC= 2mA ; VCE= 2V; f= 900MHz NF Noise Figure ︱S21e︱2 Insertion Power Gain IC= 2mA ; VCE= 2V; f= 2GHz IC= 30mA ; VCE= 8V; f= 2GHz 4.5 V 200 nA 50 100 150 25 GHz 0.8 dB 1.2 dB 17 dB isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BFP420W NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BFP420 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
2 | BFP420 |
Infineon |
Surface mount wideband silicon NPN RF bipolar transistor | |
3 | BFP420F |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
4 | BFP405 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
5 | BFP405 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
6 | BFP405F |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
7 | BFP410 |
Infineon |
Low Noise Silicon Bipolar RF Transistor | |
8 | BFP450 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
9 | BFP450 |
Infineon |
Surface mount high linearity wideband silicon NPN RF bipolar transistor | |
10 | BFP460 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
11 | BFP490 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
12 | BFP10 |
Thomson Semiconductors |
(BFPxx) Class A Low Noise |