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Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds • For high frequency oscillators e.g. DRO for LNB • For ISM band applications like Automatic Meter Reading, Sensors etc. • Transit frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 av.
50 -55 ... 150 Unit V mA mW °C 1 2013-08-16 BFP410 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 335 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 2 V, VBE = 0 VCE = 5 V, VBE = 0 , TA = 85 °C (verified by random sampling) V(BR)CEO 4.5 5 -V ICES nA - 1 30 - 2 50 Collector-base cutoff current VCB = 2 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BFP405 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 2 | BFP405 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 3 | BFP405F |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 4 | BFP420 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 5 | BFP420 |
Infineon |
Surface mount wideband silicon NPN RF bipolar transistor |
|
| 6 | BFP420F |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 7 | BFP420W |
INCHANGE |
NPN Transistor |
|
| 8 | BFP450 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 9 | BFP450 |
Infineon |
Surface mount high linearity wideband silicon NPN RF bipolar transistor |
|
| 10 | BFP460 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 11 | BFP490 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 12 | BFP10 |
Thomson Semiconductors |
(BFPxx) Class A Low Noise |
|