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BFP420W |
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| Part Number | BFP420W |
| Manufacturer | INCHANGE |
| Description | ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in RF wideba... |
| Features |
C Current Gain
IC= 20mA ; VCE= 4V
fT
Transition frequency
IC= 25mA ; VCE= 2V; f= 2GHz
NF
Noise Figure
IC= 2mA ; VCE= 2V; f= 900MHz
NF
Noise Figure
︱S21e︱2 Insertion Power Gain
IC= 2mA ; VCE= 2V; f= 2GHz IC= 30mA ; VCE= 8V; f= 2GHz
4.5
V
200 nA
50 100 150
25
GHz
0.8
dB
1.2
dB
17
dB
isc website：www.iscsemi.com
2 isc & iscsemi is registered trademark
isc Silicon NPN RF Transistor
BFP420W
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for ... |
| Document |
 BFP420W Data Sheet
PDF 212.95KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BFP420 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 2 | BFP420 |
Infineon |
Surface mount wideband silicon NPN RF bipolar transistor |
|
| 3 | BFP420F |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 4 | BFP405 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 5 | BFP405 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|