BFP410 Infineon Low Noise Silicon Bipolar RF Transistor Datasheet, en stock, prix

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BFP410

Infineon
BFP410
BFP410 BFP410
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Part Number BFP410
Manufacturer Infineon (https://www.infineon.com/)
Description Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds • For high frequency oscillators e.g. DRO for LNB • For ISM band applications like Automatic Meter Reading, Sen...
Features 50 -55 ... 150 Unit V mA mW °C 1 2013-08-16 BFP410 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 335 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 2 V, VBE = 0 VCE = 5 V, VBE = 0 , TA = 85 °C (verified by random sampling) V(BR)CEO 4.5 5 -V ICES nA - 1 30 - 2 50 Collector-base cutoff current VCB = 2 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC ...

Document Datasheet BFP410 Data Sheet
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