BFP410 |
Part Number | BFP410 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds • For high frequency oscillators e.g. DRO for LNB • For ISM band applications like Automatic Meter Reading, Sen... |
Features |
50 -55 ... 150
Unit V
mA mW °C
1 2013-08-16
BFP410
Thermal Resistance Parameter Junction - soldering point1)
Symbol RthJS
Value 335
Unit K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 2 V, VBE = 0 VCE = 5 V, VBE = 0 , TA = 85 °C (verified by random sampling)
V(BR)CEO 4.5
5
-V
ICES
nA - 1 30 - 2 50
Collector-base cutoff current VCB = 2 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC ... |
Document |
BFP410 Data Sheet
PDF 567.88KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BFP405 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
2 | BFP405 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
3 | BFP405F |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
4 | BFP420 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
5 | BFP420 |
Infineon |
Surface mount wideband silicon NPN RF bipolar transistor |