BAS3010S - Infineon Technologies

BAS3010S Low VF Schottky Diode

BAS3010S... Low VF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Low forward voltage and smallest package form factor (1.0 x 0.6 x < 0.4 mm) for mobile phone battery charger application • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAS3010S-03LRH 2 3 1 Type BAS3010S-03LRH* * Preliminary data Package TSLP-3-7 Config.

Features

. Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 38 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 V VR = 10 V VR = 30 V Forward voltage2) IF = 100 mA IF = 350 mA IF = 1000 mA VF 340 400 570 15 30 300 390 450 650 Unit µA mV AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz 1For CT - 10 15 pF calculation of RthJA please refer to Application Note Thermal Resistance test: tp = 300 µs; D = 0.01 2Pulsed www.DataSheet4U.com 2 200.