BAS3010A - Infineon Technologies

BAS3010A Medium Power AF Schottky Diode

BAS3010A... Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ I F = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAS 3010A-03W  Type BAS3010A-03W Parameter Diode reve.

Features

to the attached curves. 1 2007-04-10 BAS3010A... Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 82 Unit K/W Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 V VR = 10 V VR = 30 V Forward voltage2) IF = 1 mA IF = 10 mA IF = 100 mA IF = 500 mA IF = 1 A VF 170 220 290 350 410 220 270 340 410 470 5 10 40 25 50 200 µA mV AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz 1For CT - 28 35 pF calculation of RthJA please refer to Applicatio.