Low VF Schottky Diode • Reverse voltage: 30 V • Forward current: 1 A • Low forward voltage and smallest package form factor (1.0 x 0.6 x < 4 mm) for mobile phone battery charger application • Pb-free (RoHS compliant) package BAS3010S-02LRH BAS3010S-02LRH 1 2 Type BAS3010S-02LRH Package TSLP-2-17 Configuration single Maximum Ratings at TA = 25 °C, unl.
Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current1) IR µA VR = 10 V - - 30 VR = 30 V - - 300 Forward voltage1) VF mV IF = 1 mA - 200 250 IF = 100 mA - 340 390 IF = 700 mA - 500 570 IF = 1000 mA - 570 650 AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz 1Pulsed test: tp = 300 µs; D = 0.01 CT - 10 15 pF 2 2011-06-08 BAS3010S-02LRH Diode capacitance CT = ƒ (VR) f = 1MHz Reverse current IR = ƒ (TA) VR = Parameter 35 10 -2 A pF 10 -3 25 IR CT 20 15 10 5 0 0 5 10 15 20 V 30 VR 10 -4 10 -5 30 V 20 V 10 V 5V .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAS3010S-03LRH |
Infineon |
Low VF Schottky Diode | |
2 | BAS3010S |
Infineon Technologies |
Low VF Schottky Diode | |
3 | BAS3010A |
Infineon Technologies |
Medium Power AF Schottky Diode | |
4 | BAS3010A-03W |
Infineon |
Medium Power AF Schottky Diode | |
5 | BAS3010B |
Infineon Technologies |
Medium Power AF Schottky Diode | |
6 | BAS3010B-03W |
Infineon |
Medium Power AF Schottky Diode | |
7 | BAS3005A |
Infineon Technologies |
Low VF Schottky Diode | |
8 | BAS3005A-02V |
Infineon |
Low VF Schottky Diode | |
9 | BAS3005B |
Infineon Technologies |
Medium Power AF Schottky Diode | |
10 | BAS3005B-02LRH |
Infineon |
Medium Power AF Schottky Diode | |
11 | BAS3005B-02V |
Infineon |
Medium Power AF Schottky Diode | |
12 | BAS3007A |
Infineon Technologies |
Low VF Schottky Diode Array |