Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAS3010A... BAS 3010A-03W Type BAS3010A-03W Package SOD323 Confi.
ed. Please refer to the attached curves. 1 2007-04-10 BAS3010A... Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value Unit ≤ 82 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 V - 5 25 VR = 10 V - 10 50 VR = 30 V - 40 200 Forward voltage2) VF IF = 1 mA - 170 220 IF = 10 mA - 220 270 IF = 100 mA - 290 340 IF = 500 mA - 350 410 IF = 1 A - 410 470 Unit µA mV AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz CT - 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAS3010A |
Infineon Technologies |
Medium Power AF Schottky Diode | |
2 | BAS3010B |
Infineon Technologies |
Medium Power AF Schottky Diode | |
3 | BAS3010B-03W |
Infineon |
Medium Power AF Schottky Diode | |
4 | BAS3010S |
Infineon Technologies |
Low VF Schottky Diode | |
5 | BAS3010S-02LRH |
Infineon |
Low VF Schottky Diode | |
6 | BAS3010S-03LRH |
Infineon |
Low VF Schottky Diode | |
7 | BAS3005A |
Infineon Technologies |
Low VF Schottky Diode | |
8 | BAS3005A-02V |
Infineon |
Low VF Schottky Diode | |
9 | BAS3005B |
Infineon Technologies |
Medium Power AF Schottky Diode | |
10 | BAS3005B-02LRH |
Infineon |
Medium Power AF Schottky Diode | |
11 | BAS3005B-02V |
Infineon |
Medium Power AF Schottky Diode | |
12 | BAS3007A |
Infineon Technologies |
Low VF Schottky Diode Array |