BAS3007A... Low VF Schottky Diode Array • Reverse voltage: 30 V • Forward current: 0.9 A • Small diode quad array for polarity independence, reverse polarity protection and low loss bridge rectification • Very low forward voltage: 0.5 V typ. @ 0.7 A (per diode) • Fast switching • Pb-free (ROHS compliant) package 1) • Qualified according AEC Q101 BAS3007A-RP.
the attached curves. 1 2007-11-20 BAS3007A... Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 95 Unit K/W Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current (per diode)2) IR VR = 12 V VR = 30 V Forward voltage (per diode)2)3) IF = 100 mA IF = 350 mA IF = 500 mA IF = 700 mA IF = 900 mA VF 0.35 0.4 0.45 0.5 0.6 0.4 0.5 0.55 0.6 0.7 30 350 µA V AC Characteristics Diode capacitance (per diode) VR = 5 V, f = 1 MHz 1For CT - 9 15 pF calculation of RthJA ple.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAS3005A |
Infineon Technologies |
Low VF Schottky Diode | |
2 | BAS3005A-02V |
Infineon |
Low VF Schottky Diode | |
3 | BAS3005B |
Infineon Technologies |
Medium Power AF Schottky Diode | |
4 | BAS3005B-02LRH |
Infineon |
Medium Power AF Schottky Diode | |
5 | BAS3005B-02V |
Infineon |
Medium Power AF Schottky Diode | |
6 | BAS3010A |
Infineon Technologies |
Medium Power AF Schottky Diode | |
7 | BAS3010A-03W |
Infineon |
Medium Power AF Schottky Diode | |
8 | BAS3010B |
Infineon Technologies |
Medium Power AF Schottky Diode | |
9 | BAS3010B-03W |
Infineon |
Medium Power AF Schottky Diode | |
10 | BAS3010S |
Infineon Technologies |
Low VF Schottky Diode | |
11 | BAS3010S-02LRH |
Infineon |
Low VF Schottky Diode | |
12 | BAS3010S-03LRH |
Infineon |
Low VF Schottky Diode |