BAS3010B - Infineon Technologies

BAS3010B Medium Power AF Schottky Diode

BAS3010B... Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Low forward voltage, low reverse current • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAS3010B-03W  Type BAS3010B-03W Parameter Diode reverse volta.

Features

ached curves. 1 2007-04-19 BAS3010B... Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 82 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 V VR = 10 V VR = 30 V Forward voltage2) IF = 1 mA IF = 10 mA IF = 100 mA IF = 500 mA IF = 1 A VF 230 300 360 420 480 280 350 420 480 550 5 10 20 Unit µA mV AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz 1For CT - 33 40 pF calculation of RthJA please refer to Application Note Thermal Resi.