Low VF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.45 V @ IF = 0.5 A) • For low loss, fast-recovery protecting and clamping applications • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BAS3005A... BAS3005A-02V Type BAS3005A-02V Package SC79 Configuration single Maximum Ratings a.
meter Junction - soldering point1) Symbol RthJS Value Unit ≤ 80 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 V - - 15 VR = 10 V - - 30 VR = 30 V - - 300 Forward voltage2) VF IF = 1 mA - 200 260 IF = 10 mA - 260 310 IF = 100 mA - 340 390 IF = 200 mA - 370 420 IF = 500 mA - 450 500 Unit µA mV Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics Diode capacitance CT - .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAS3005A |
Infineon Technologies |
Low VF Schottky Diode | |
2 | BAS3005B |
Infineon Technologies |
Medium Power AF Schottky Diode | |
3 | BAS3005B-02LRH |
Infineon |
Medium Power AF Schottky Diode | |
4 | BAS3005B-02V |
Infineon |
Medium Power AF Schottky Diode | |
5 | BAS3007A |
Infineon Technologies |
Low VF Schottky Diode Array | |
6 | BAS3010A |
Infineon Technologies |
Medium Power AF Schottky Diode | |
7 | BAS3010A-03W |
Infineon |
Medium Power AF Schottky Diode | |
8 | BAS3010B |
Infineon Technologies |
Medium Power AF Schottky Diode | |
9 | BAS3010B-03W |
Infineon |
Medium Power AF Schottky Diode | |
10 | BAS3010S |
Infineon Technologies |
Low VF Schottky Diode | |
11 | BAS3010S-02LRH |
Infineon |
Low VF Schottky Diode | |
12 | BAS3010S-03LRH |
Infineon |
Low VF Schottky Diode |