Medium Power AF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Low capacitance, low reverse current • For high efficiency DC/DC conversion, fast switching, protecting and clamping applications • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BAS3005B-02LRH* BAS3005B-02V BAS3005B.... Type BAS3005B-02LRH* BAS3005B-02V *P.
rating of VR and IF has to be considered. Please refer to the attached curves. Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value ≤ 80 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current1) IR µA VR = 5 V - 1 5 VR = 10 V - 2 10 VR = 30 V - 5 25 Forward voltage1) VF mV IF = 1 mA - 200 250 IF = 10 mA - 260 310 IF = 100 mA - 360 410 IF = 200 mA - 410 47.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAS3005A |
Infineon Technologies |
Low VF Schottky Diode | |
2 | BAS3005A-02V |
Infineon |
Low VF Schottky Diode | |
3 | BAS3005B-02LRH |
Infineon |
Medium Power AF Schottky Diode | |
4 | BAS3005B-02V |
Infineon |
Medium Power AF Schottky Diode | |
5 | BAS3007A |
Infineon Technologies |
Low VF Schottky Diode Array | |
6 | BAS3010A |
Infineon Technologies |
Medium Power AF Schottky Diode | |
7 | BAS3010A-03W |
Infineon |
Medium Power AF Schottky Diode | |
8 | BAS3010B |
Infineon Technologies |
Medium Power AF Schottky Diode | |
9 | BAS3010B-03W |
Infineon |
Medium Power AF Schottky Diode | |
10 | BAS3010S |
Infineon Technologies |
Low VF Schottky Diode | |
11 | BAS3010S-02LRH |
Infineon |
Low VF Schottky Diode | |
12 | BAS3010S-03LRH |
Infineon |
Low VF Schottky Diode |