3DD208 - Inchange Semiconductor

3DD208 Silicon NPN Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 0.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and power amplifier applications. ABSOLUTE MAXIMUM.

Features

O Collector-Base Breakdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICEO Collector Cutoff Current VCE= 50V; IB= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE= 10V 3DD208 MIN MAX UNIT 200 V 300 V 6 V 2.0 V 0.1 mA 0.1 mA 30 250 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our produc.