3DD200 - Inchange

3DD200 Silicon Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 30~120(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .

Features

ACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 150V; IE=0 hFE DC Current Gain IC= 2A; VCE= 5V tf Fall Time IC= 3A; IB1= 0.2A, IB2= -0.3A, MIN MAX UNIT 100 V 250 V 6 V 1.5 V 1.5 V 0.5 mA 30 120 1.0 μs  hFE Clas.