3DD202B - INCHANGE

3DD202B NPN Transistor

·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volt.

Features

PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 5mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 0.5mA; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A VBE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A ICBO Collector Cutoff Current VCB=1000V; IE= 0 hFE DC Current Gain IC= 1.5A; VCE= 10V MIN MAX UNIT 1500 V 800 V 8 V 3 V 1.5 V 0.3 mA 7 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The infor.