3DD2101 - Jilin Sino

3DD2101 CASE-RATED BIPOLAR TRANSISTOR

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2101 FOR LOW FREQUENCY R 3DD2101 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900 V 5A 0.5 V(max) 0.5 s(max) Package TO-3P(H)IS APPLICATIONS z z Switching power supply for color TV. z3DD2101 NPN FEATURES z 3DD2101 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltag.

Features

z 3DD2101 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, , triple diffused process etc., adoption of fully plastic packge. RoHS RoHS product. 123 EQUIVALENT CIRCUIT ORDER MESSAGE Order codes Marking Halogen Free Package 3DD2101-O-A-N-D D2101 MARKING NO TO-3P(H)IS Packaging Foam Device Weight 5.50 g(typ) Trademark Part No. Year month For example 8 2008 10 10 october 200911E 1/6 R ABSOLUTE RATINGS (Tc=25 ) 3DD2101 Parameter — Collector−Base Voltage — Collector−Emitter Voltage — Emitter−Base Voltage.