3DD2073 NPN PCM ICM Tjm Tstg Rth V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VBEsat VCEsat hFE Tc=25℃ VCE=10V IC=0.8A ICB=1mA ICE=1mA IEB=1mA VCB=120V VEB=5V Ic=0.5A IB=0.05A VCB=10V Ic=0.5A 25 1.5 175 -55~150 4 ≥150 ≥150 ≥5.0 ≤10 ≤10 ≤3.0 ≤1.5 25~200 W A ℃ ℃ ℃/W V V V mA mA V SMD-1 B2-01B(F1) : 2SA940 TO-220 TO-257 1. E 2. B .
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3DD207 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
2 | 3DD207I |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
3 | 3DD200 |
Inchange |
Silicon Power Transistor | |
4 | 3DD200D |
INCHANGE |
NPN Transistor | |
5 | 3DD201 |
Inchange |
Silicon Power Transistor | |
6 | 3DD202A |
INCHANGE |
NPN Transistor | |
7 | 3DD202B |
INCHANGE |
NPN Transistor | |
8 | 3DD208 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
9 | 3DD209L |
Jilin Sino |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
10 | 3DD209L |
INCHANGE |
NPN Transistor | |
11 | 3DD2101 |
Jilin Sino |
CASE-RATED BIPOLAR TRANSISTOR | |
12 | 3DD2102 |
ETC |
Low-frequency amplification shell rated bipolar transistors |