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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A APPLICATIONS ·Designed for auto amplifier application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6V.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DD207 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 2 | 3DD2073 |
ETC |
NPN Transistor |
|
| 3 | 3DD200 |
Inchange |
Silicon Power Transistor |
|
| 4 | 3DD200D |
INCHANGE |
NPN Transistor |
|
| 5 | 3DD201 |
Inchange |
Silicon Power Transistor |
|
| 6 | 3DD202A |
INCHANGE |
NPN Transistor |
|
| 7 | 3DD202B |
INCHANGE |
NPN Transistor |
|
| 8 | 3DD208 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 9 | 3DD209L |
Jilin Sino |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 10 | 3DD209L |
INCHANGE |
NPN Transistor |
|
| 11 | 3DD2101 |
Jilin Sino |
CASE-RATED BIPOLAR TRANSISTOR |
|
| 12 | 3DD2102 |
ETC |
Low-frequency amplification shell rated bipolar transistors |
|