Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circui.
：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD200D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCBO Collector- Base Sustaining Voltage IB=1mA ; IE=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 3.2A VBE(on) Base-Emitter On Voltage IC= 8A ; VCE= 4V ICEO Collector Cutoff Current VCE= 200V; IB=0 IEBO Emitter Cutoff Current .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DD200 |
Inchange |
Silicon Power Transistor |
|
| 2 | 3DD201 |
Inchange |
Silicon Power Transistor |
|
| 3 | 3DD202A |
INCHANGE |
NPN Transistor |
|
| 4 | 3DD202B |
INCHANGE |
NPN Transistor |
|
| 5 | 3DD207 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 6 | 3DD2073 |
ETC |
NPN Transistor |
|
| 7 | 3DD207I |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | 3DD208 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 9 | 3DD209L |
Jilin Sino |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 10 | 3DD209L |
INCHANGE |
NPN Transistor |
|
| 11 | 3DD2101 |
Jilin Sino |
CASE-RATED BIPOLAR TRANSISTOR |
|
| 12 | 3DD2102 |
ETC |
Low-frequency amplification shell rated bipolar transistors |
|