30N50 - IXYS

30N50 N-Channel MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFT 30N50 IXFH/IXFT 32N50 V DSS 500 V 500 V I D25 30 A 32 A R DS(on) 0.16 W 0.15 W trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS V GSM Continuous Transient ±30 ID25 TC = 25°C IDM TC = 25°C pulse widt.

Features

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic Diode Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls Advantages
• Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)
• Space savings
• High power density IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IX.