30N12 - Inchange Semiconductor

30N12 N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N12 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.075Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY.

Features

·Drain Current ID= 30A@ TC=25℃
·Drain Source Voltage- : VDSS= 120V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.075Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 120 ±30 V V ID Drain Current-Continuous 30 A IDM Drain Current-Single Plused 100 A PD Total Dissipation @TC=25℃ 120 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
·THERMAL CHARACTERISTICS SYMBOL PAR.