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The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products. FEATUR.
* RDS(ON) < 40mΩ@VGS = 10 V, ID=15A
* Fast switching capability
* Avalanche energy specified
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
30N06VL-TM3-T
30N06VG-TM3-T
TO-251
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123 GDS
Packing Tube
www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-A29. a
30N06V-Q
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate to Source Voltage
VDSS VG.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 30N06 |
Inchange Semiconductor |
N-Channel MOSFET |
|
| 2 | 30N06 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 3 | 30N06-Q |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 4 | 30N06G |
UTC |
N-CHANNEL POWER MOSFET |
|
| 5 | 30N06L |
UTC |
N-CHANNEL POWER MOSFET |
|
| 6 | 30N05 |
Inchange Semiconductor |
N-Channel MOSFET |
|
| 7 | 30N10 |
Inchange Semiconductor |
N-Channel MOSFET |
|
| 8 | 30N12 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | 30N15 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | 30N20 |
Unisonic Technologies |
200V N-CHANNEL POWER MOSFET |
|
| 11 | 30N20G |
ON Semiconductor |
Power MOSFET |
|
| 12 | 30N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|