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The UTC 30N20 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. FEATURES * RDS(ON) < 75mΩ @ VGS=10V, ID=15A * Low Gate Charge (Typical 60nC) * High Switching Speed SYMBOL Po.
* RDS(ON) < 75mΩ @ VGS=10V, ID=15A
* Low Gate Charge (Typical 60nC)
* High Switching Speed
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
30N20L-TA3-T
30N20G-TF2-T
30N20L-TF2-T
30N20G-TF2-T
30N20L-T47-T
30N20G-T47-T
30N20L-TQ2-T
30N20G-TQ2-T
30N20L-TQ2-R
30N20G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F2
TO-247 TO-263 TO-263
Pin Assignment 123 GDS GDS GDS GDS GDS
Packing
Tube Tube Tube Tube Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-823.E
30N.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 30N20G |
ON Semiconductor |
Power MOSFET |
|
| 2 | 30N05 |
Inchange Semiconductor |
N-Channel MOSFET |
|
| 3 | 30N06 |
Inchange Semiconductor |
N-Channel MOSFET |
|
| 4 | 30N06 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 5 | 30N06-Q |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 6 | 30N06G |
UTC |
N-CHANNEL POWER MOSFET |
|
| 7 | 30N06L |
UTC |
N-CHANNEL POWER MOSFET |
|
| 8 | 30N06V-Q |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 9 | 30N10 |
Inchange Semiconductor |
N-Channel MOSFET |
|
| 10 | 30N12 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 11 | 30N15 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 12 | 30N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|