INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N10 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.77Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
·Drain Current ID= 30A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.77Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
100 ±30
V V
ID Drain Current-Continuous
30 A
PD Total Dissipation @TC=25℃
79 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
isc website:www.iscsemi.cn
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1 | 30N12 |
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2 | 30N15 |
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3 | 30N05 |
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4 | 30N06 |
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5 | 30N06 |
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N-CHANNEL POWER MOSFET | |
6 | 30N06-Q |
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7 | 30N06G |
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8 | 30N06L |
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9 | 30N06V-Q |
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N-CHANNEL POWER MOSFET | |
10 | 30N20 |
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200V N-CHANNEL POWER MOSFET | |
11 | 30N20G |
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12 | 30N40 |
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