The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products. FEATURE.
* RDS(ON) = 40mΩ@VGS = 10 V, ID=15A
* Ultra low gate charge ( typical 20nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
SYMBOL
1 TO-220
1 TO-220F
1 TO-220F1
1 TO-220F2
1 TO-251
1 TO- 252
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
30N06L-TA3-T
30N06G-TA3-T
TO-220
30N06L-TF1-T
30N06G-TF1-T
TO-220F1
30N06L-TF2-T
30N06G-TF2-T
TO-220F2
30N06L-TF3-T
30N06G-TF3-T
TO-220F
30N06L-TM3-T
30N06G-TM3-T
TO-251
30N06L-TN3-T
30N06G-TN3-T
TO-252
30N06L.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 30N06 |
Inchange Semiconductor |
N-Channel MOSFET | |
2 | 30N06 |
UTC |
N-CHANNEL POWER MOSFET | |
3 | 30N06G |
UTC |
N-CHANNEL POWER MOSFET | |
4 | 30N06L |
UTC |
N-CHANNEL POWER MOSFET | |
5 | 30N06V-Q |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
6 | 30N05 |
Inchange Semiconductor |
N-Channel MOSFET | |
7 | 30N10 |
Inchange Semiconductor |
N-Channel MOSFET | |
8 | 30N12 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 30N15 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 30N20 |
Unisonic Technologies |
200V N-CHANNEL POWER MOSFET | |
11 | 30N20G |
ON Semiconductor |
Power MOSFET | |
12 | 30N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |