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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.05Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY.
·Static drain-source on-resistance:
RDS(on) ≤0.05Ω
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Be suitable for synchronous rectification for server and
general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
30
IDM
Drain Current-Single Pulsed
100
PD
Total Dissipation @TC=25℃
105
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT .
30N06 - UTC
The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low g.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 30N05 |
Inchange Semiconductor |
N-Channel MOSFET |
|
| 2 | 30N06-Q |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 3 | 30N06G |
UTC |
N-CHANNEL POWER MOSFET |
|
| 4 | 30N06L |
UTC |
N-CHANNEL POWER MOSFET |
|
| 5 | 30N06V-Q |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 6 | 30N10 |
Inchange Semiconductor |
N-Channel MOSFET |
|
| 7 | 30N12 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | 30N15 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | 30N20 |
Unisonic Technologies |
200V N-CHANNEL POWER MOSFET |
|
| 10 | 30N20G |
ON Semiconductor |
Power MOSFET |
|
| 11 | 30N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 12 | 30N45 |
IXYS |
N-Channel MOSFET |
|