2SK2157 - NEC

2SK2157 N-CHANNEL MOS FET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2157 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2157 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and .

Features

• New package intermediate between small-signal and power models
• Can be directly driven by output of 5-V IC
• Low ON resistance RDS(on) ≤ 0.15 Ω @VGS = 4 V, ID = 2.5 A RDS(on) ≤ 0.10 Ω @VGS = 10 V, ID = 2.5 A 1.0 S 0.5 ±0.1 D G 0.5 ±0.1 2.1 4.2 0.85 ±0.1 0.41 ±0.05 EQUIVALENT CIRCUIT Drain (D) Gate (G) Gate protection diode Source (S) Marking: NA4 Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms,.