The 2SK2157C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 63 m MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)2 = 65 m MAX. (VGS = 4.0 V, ID = 2.0 A) RDS(on)3 = 91 m MAX. (VGS = 2.5 V, .
Directly driven by a 2.5 V power source.
Low on-state resistance RDS(on)1 = 63 m MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)2 = 65 m MAX. (VGS = 4.0 V, ID = 2.0 A) RDS(on)3 = 91 m MAX. (VGS = 2.5 V, ID = 2.0 A)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SK2157C-T1-AZ/AY
-AZ : Sn-Bi , -AY : Pure Sn
1000p/Reel
SC-84 (MP-2)
Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking XR1
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2157 |
NEC |
N-CHANNEL MOS FET | |
2 | 2SK215 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
3 | 2SK215 |
Renesas Technology |
N-Channel MOSFET | |
4 | 2SK2150 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK2150 |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | 2SK2151 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
7 | 2SK2152 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
8 | 2SK2154 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
9 | 2SK2158 |
NEC |
N-CHANNEL MOS FET | |
10 | 2SK2159 |
NEC |
N-CHANNEL MOS FET | |
11 | 2SK210 |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | 2SK2100-01MR |
Fuji Electric |
Power MOSFET |