2SK2157 |
Part Number | 2SK2157 |
Manufacturer | NEC |
Description | DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2157 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2157 is a N-channel MOS FET of a vertical type and is a switching element that can be directly drive... |
Features |
• New package intermediate between small-signal and power models • Can be directly driven by output of 5-V IC • Low ON resistance RDS(on) ≤ 0.15 Ω @VGS = 4 V, ID = 2.5 A RDS(on) ≤ 0.10 Ω @VGS = 10 V, ID = 2.5 A 1.0 S 0.5 ±0.1 D G 0.5 ±0.1 2.1 4.2 0.85 ±0.1 0.41 ±0.05 EQUIVALENT CIRCUIT Drain (D) Gate (G) Gate protection diode Source (S) Marking: NA4 Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms,... |
Document |
2SK2157 Data Sheet
PDF 60.45KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK215 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
2 | 2SK215 |
Renesas Technology |
N-Channel MOSFET | |
3 | 2SK2150 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK2150 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK2151 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |