2SK2159 - NEC

2SK2159 N-CHANNEL MOS FET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2159 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2159 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2159 is suitable for driving actuators of low-voltage portable syst.

Features

• Capable of drive gate with 1.5 V
• Small RDS(on) RDS(on) = 0.7 Ω MAX. @VGS = 1.5 V, ID = 0.1 A RDS(on) = 0.3 Ω MAX. @VGS = 4.0 V, ID = 1.0 A 0.47 1.5 ± 0.06 3.0 0.42 ± 0.06 0.41+0.03
  –0.05 EQUIVALENT CIRCUIT 2 3 Gate protection diode 1 Internal diode PIN CONNECTION 1. Source (S) 2. Drain (D) Marking: NW 3. Gate (G) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms, Duty Cycle ≤ 50 % Mounted on 16 cm2 × 0.7 mm ceramic substrate. VGS = 0 VDS = 0 TEST COND.