Ordering number:ENN4689 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK2154 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2083B [2SK2154] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 0.85 0.7 1.2 0.8 1.6 7.5 unit:mm 2092B 0.6 12 3 2.3 2.3 0.5 1 : Gate 2 : Drain 3 : Source SANYO : .
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
N-Channel Silicon MOSFET
2SK2154
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2083B
[2SK2154]
6.5 5.0
4
2.3 0.5
5.5 1.5 7.0
0.85 0.7
1.2
0.8 1.6 7.5
unit:mm 2092B
0.6 12 3
2.3 2.3
0.5
1 : Gate 2 : Drain 3 : Source SANYO : TP
[2SK2154]
6.5 2.3 5.0 0.5 4
0.8 5.5 1.5
2.5 7.0 1.2
0.85 1
0.6
2
3
0.5
1.2 0 to 0.2
2.3 2.3
1 : Gate 2 : Drain 3 : Source SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK215 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
2 | 2SK215 |
Renesas Technology |
N-Channel MOSFET | |
3 | 2SK2150 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK2150 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK2151 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
6 | 2SK2152 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
7 | 2SK2157 |
NEC |
N-CHANNEL MOS FET | |
8 | 2SK2157C |
Renesas |
N-CHANNEL MOSFET | |
9 | 2SK2158 |
NEC |
N-CHANNEL MOS FET | |
10 | 2SK2159 |
NEC |
N-CHANNEL MOS FET | |
11 | 2SK210 |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | 2SK2100-01MR |
Fuji Electric |
Power MOSFET |