2SK2150 - Inchange Semiconductor

2SK2150 N-Channel MOSFET Transistor

·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS G.

Features

R)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VDS Diode Forward Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time ton Turn-on Time tf Fall Time toff Turn-off Time CONDITIONS VGS= 0; ID= 10mA VDS=10V; ID=1mA IDR=15A ;VGS= 0 VGS= 10V; ID= 7A VGS= ±25V;VDS= 0 VDS= 500V; VGS= 0 VDS=25V; VGS=0V; fT=1MHz VGS=10V; ID=7A; VDD=210V; RL=30Ω MIN TYPE MAX UNIT 500 V 2.0 4.0 V 1.7 V 0.29 0.4 Ω ±10 nA .