Ordering number:ENN4568A Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK2151 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SK2151] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 3.0 1 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Sou.
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
N-Channel Silicon MOSFET
2SK2151
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2062A
[2SK2151] 4.5 1.6
1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5 3.0
1
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C Mounted on a ceramic board (250mm2× 0.8mm)
El.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK215 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
2 | 2SK215 |
Renesas Technology |
N-Channel MOSFET | |
3 | 2SK2150 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK2150 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK2152 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
6 | 2SK2154 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
7 | 2SK2157 |
NEC |
N-CHANNEL MOS FET | |
8 | 2SK2157C |
Renesas |
N-CHANNEL MOSFET | |
9 | 2SK2158 |
NEC |
N-CHANNEL MOS FET | |
10 | 2SK2159 |
NEC |
N-CHANNEL MOS FET | |
11 | 2SK210 |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | 2SK2100-01MR |
Fuji Electric |
Power MOSFET |